Ncert Exercises & Solutions

The breakdown in a reverse-biased \(\mathrm{p\text-n}\) junction is more likely to occur due to:

(a)	the large velocity of the minority charge carriers if the doping concentration is small.
(b)	the large velocity of the minority charge carriers if the doping concentration is large.
(c)	strong electric field in a depletion region if the doping concentration is small.
(d)	strong electric field in the depletion region if the doping concentration is large.

Choose the correct option:
1. (a), (d)
2. (b), (d)
3. (c), (d)
4. (b), (c)